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| CHENMKO ENTERPRISE CO.,LTD SURFACE MOUNT High Voltage NPN Transistor VOLTAGE 300 Volts APPLICATION * Small Signal Amplifier . CHTA42LPT CURRENT 500 mAmpere FEATURE * Surface mount package. (SC-59/SOT-346) * Low saturation voltage VCE(sat)=0.5V(max.)(IC=20mA) * Low cob. Cob=3.0pF(Typ.) * PD= 300mW (mounted on ceramic substrate). * High saturation current capability. 1.90.2 (1) SC-59/SOT-346 (3) (2) 0.95 2.90.2 0.95 CONSTRUCTION * NPN Silicon Transistor * Epitaxial planner type 0.1 0.40.05 1.6 0.2 0.1 MARKING * NB 0.15 0.1 0.06 0.3~0.6 C (3) (1) B 0.2 1.1 0.1 0.80.1 0~0.1 2.80.2 CIRCUIT E(2) Dimensions in inches and (millimeters) SC-59/SOT-346 MAXIMUM RATINGES ( At TA = 25oC unless otherwise noted ) RATINGS Collector - Base Voltage Collector - Emitter Voltage Emitter - Base Voltage Collector Current DC Peak Collector Current Peak Base Current Total Power Dissipation Storage Temperature Junction Temperature Operating Ambient Temperature TA 25OC; Note 1 CONDITION Open Emitter Open Base Open Collector SYMBOL VCBO VCEO VEBO IC ICM IBM PTOT TSTG TJ TAMB MIN. -55 -55 MAX. 300 300 6.0 500 500 15 300 +150 +150 +150 UNITS Volts Volts Volts mAmps mAmps mAmps mW o C C C o o Note 1. Transistor mounted on ceramic substrate 50mmX50mmx0.8t. 2. Measured at Pulse Width 300 us, Duty Cycle 2%. 2002-11 RATING CHARACTERISTICS ( CHTA42LPT ) ELECTRICAL CHARACTERISTICS ( At TA = 25oC unless otherwise noted ) PARAMETERS Collector Cut-off Current Emitter Cut-off Current CONDITION IE=0; VCB=200V IC=0; VEB=6.0V VCE=10V; Note 1 IC=1.0mA IC=10mA IC=30mA IC=20mA; IB=2mA IC=20mA; IB=2mA IE=ie=0; VCB=20V; f=1MHz IC=10mA; VCE=20V; f=100MHz SYMBOL ICBO ICEO MIN. 25 40 40 50 TYPE MAX. 0.1 0.1 0.5 0.9 3.0 Volts Volts pF MHz UNITS uA uA DC Current Gain hFE Collector-Emitter Saturation Voltage Base-Emitter Saturatio Voltage Output Collector Capacitance Transition Frequency VCE(sat) VBE(sat) Cob fT Note : 1. Pulse test: tp 300uSec; 0.02. RATING CHARACTERISTIC CURVES ( CHTA42LPT ) Figure 1. DC Current Gain 120 VCE=10Vdc hFE, DC CURRENT GAIN 100 80 60 40 -55OC 20 0 0.1 1.0 IC, COLLECTOR CURRENT (mA) 10 100 25OC TJ = +125OC Figure 2. Capacitance fT, CURRENT GAIN - BANDWIDT (MHz) 100 Ceb @ 1MHz C, CAPACITANCE (pF) 80 70 60 50 40 30 20 10 1.0 Figure 3. Current-Gain - Bandwidth 10 1.0 Ccb @ 1MHz TJ = 25OC VCE = 20 V f = 20 MHz 2.0 3.0 5.0 7.0 10 20 30 50 70 100 IC, COLLECTOR CURRENT (mA) 0.1 0.1 1.0 10 100 VR, REVERSE VOLTAGE (VOLTS) 1000 Figure 4. "ON" Voltages 1.4 1.2 V, VOLTAGE (VOLTS) 1.0 0.8 0.6 0.4 0.2 0.0 0.1 1.0 10 IC, COLLECTOR CURRENT (mA) 100 VCE(sat)@25OC,IC/IB=10 VCE(sat)@125OC,IC/IB=10 VCE(sat)@-55OC,IC/IB=10 VBE(sat)@25OC,IC/IB=10 VBE(sat)@125OC,IC/IB=10 VBE(sat)@-55OC,IC/IB=10 VBE(on)@25OC,VCE=10V VBE(on)@125OC,VCE=10V VBE(on)@-55OC,VCE=10V |
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